Accession Number : ADA133856
Title : Study of 1/f Noise in Solids.
Descriptive Note : Annual rept. 16 Jun 82-15 Jun 83,
Corporate Author : FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Van Vliet,Carolyn M ; Bosman,Gijs
PDF Url : ADA133856
Report Date : Jan 1983
Pagination or Media Count : 138
Abstract : Noise measurements were made on gold metal films. The noise above 150K is of the form 1/f to the 1.2 power; below 150K the noise goes as 1/f with a maximum near 80K, then a continued decrease. The noise in GaAs n+n-n+ mesas of submicron dimensions is very low. The Hooge parameter is of the order of 10 to the minus 7th power, indicating that collisions are nearly absent. Intervally electron transfer is noticeable in samples with 1.1 micrometer dimensions. The n+p-n+ structures have a great deal of noise associated with the prepunch-though current. This is attributed to recombination of injected electrons via empty acceptors, since in the unexcited specimen there are no holes due to electron spillover. For the first time 1/f noise was observed in radioactive alpha particle decay from 241 Americium. This noise was deduced from counting statistics using the Allan variance theorem. Calculations yielded quantitative accounts for the mobility-fluctuation noise associated with impurity scattering for silicon and gold.
Descriptors : *Semiconductors, *Metal films, *Noise, Temperature, Gold, Gallium arsenides, Charge carriers, Alpha particles, Electron transfer, Silicon, Transport properties
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE