Accession Number : ADA133923

Title :   Statistical Simulation of GaAs MESFETS.

Descriptive Note : Final scientific rept. 1 Mar 82-31 Jul 83,

Corporate Author : TOLEDO UNIV OH DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Thorbjornsen,Arthur R

PDF Url : ADA133923

Report Date : 29 Aug 1983

Pagination or Media Count : 25

Abstract : A method has been developed for the statistical simulation of gallium arsenide metal semiconductor field effect transistors. Simulated device parameter distributions were compared with measured parameter distributions using the Kolmogorov-Smirnov test. By adjusting the individual input parameter in a trial and error process, an acceptable simulation was obtained for the parameter distributions of five different devices. The correlation coefficients between device parameters produced in the simulation were acceptable except for one parameter. A set of equations was derived for computing the parameters of the Curtice GaAs MESFET model in terms of six standard measured device parameters. A comparison of simulated and measured Curtice model parameters for the five devices did not indicate an acceptable match. (Author)

Descriptors :   *Mathematical models, *Computerized simulation, *Field effect transistors, Metal oxide semiconductors, Gallium arsenides, Parametric devices, Monte Carlo method, Distribution, Input, Equations, Computations

Subject Categories : Electrical and Electronic Equipment
      Numerical Mathematics

Distribution Statement : APPROVED FOR PUBLIC RELEASE