Accession Number : ADA134183

Title :   Optical Excitation of Trapping States in Fe Doped InP.

Descriptive Note : Final rept. 1982-1983,


Personal Author(s) : Giessner,Jack

PDF Url : ADA134183

Report Date : 20 Jun 1983

Pagination or Media Count : 117

Abstract : The knowledge that defect states affect the performance and speed of semiconductors is well known. Defect and trapping states are categorized according to their sex (hole or electron trap), energy in the gap and capture cross sections. The Deep Level Transient Spectroscopy (DLTS) technique that is useful for electrical pulsing, becomes increasingly profitable using optical pulsing. The optical pulsing was accomplished using a simple, but efficient, infrared light emitting diode (LED). The LED had the fortunate property that with decreasing temperature, the average energy output of the LED stayed about equal to the bandgap for the III-V semiconductor InP. Because of these findings, emphasis was put on Fe-doped Inp using LED excitation. These particular samples are being studied by Naval Research Labs (NRL) in connection with lasing that results from Fe transitions. Models were set up for both the p+n junction and Fe transitions to help explain experimental results obtained.

Descriptors :   *Semiconductors, *Indium phosphides, *Light emitting diodes, *Excitation, *Doping, Iron, Infrared pulses, Electronic states, Energy levels, Semiconductor junctions, Trapping(Charged particles), Theory

Subject Categories : Physical Chemistry
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE