Accession Number : ADA134310
Title : Fabrication of Schottky Barrier Detectors on Thin Films of PbSSe.
Descriptive Note : Final technical rept. Jan-Sep 82 on Phase 1,
Corporate Author : BARNES ENGINEERING CO STAMFORD CT GOVERNMENT SYSTEMS DIV
Personal Author(s) : Rolls,William
PDF Url : ADA134310
Report Date : Dec 1982
Pagination or Media Count : 24
Abstract : Thin layers of lead chalcogenide have been grown on single crystal barium fluoride substrates using a modified hot wall system. Experience gained by other workers 1,2 using this type of system has been useful in determining the parameters used to grow low carrier density films in our system. However, since the systems are not identical, some differences in film properties have been noted and will be discussed in the body of the report. Films have been grown and characterized using Hall measurements to determine the mobility and carrier density. The films, as grown, are activated by exposing the surface to lead chloride which is necessary to obtain good Schottky Barrier devices. Lead contacts have been evaporated onto the surface of the layers to form the Schottky Barriers and also good contacts to form the ohmic contacts. Subsequently the contacts are connected to platinum wires using silver epoxy. After mounting onto a copper holder such that the radiation is incident on the barium fluoride surface, the devices are characterized electrically and optically.
Descriptors : *Schottky barrier devices, *Chalcogens, *Crystal growth, Thin films, Single crystals, Barium halides, Lead compounds, Fabrication, Diodes, Hall effect, Temperature
Subject Categories : Physical Chemistry
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE