Accession Number : ADA134352

Title :   Electron Spectroscopy Study of SiC,

Corporate Author : PITTSBURGH UNIV PA SURFACE SCIENCE CENTER

Personal Author(s) : Bozso,Ferenc ; Muehlhoff,Lucia ; Trenary,Michael ; Choyke,W J ; Yates,J T , Jr

PDF Url : ADA134352

Report Date : Sep 1983

Pagination or Media Count : 20

Abstract : A silicon carbide single crystal has been studied using X-ray photoelectron spectroscopy and X-ray and electron excited Auger spectroscopy. A procedure for producing an atomically clean SiC crystal surface has been perfected. The SiC exhibits prominent bulk plasmon loss features associated with Si and C photoelectrons. This loss, at 22.5 eV, agress well with optical data establishing the bulk plasmon energy. (Author)

Descriptors :   *Silicon carbides, *Single crystals, *Electron spectroscopy, Surface properties, Plasmons, Photoelectrons, Energetic properties, X ray photoelectron spectroscopy, Auger electron spectroscopy, Excitation

Subject Categories : Atomic and Molecular Physics and Spectroscopy

Distribution Statement : APPROVED FOR PUBLIC RELEASE