Accession Number : ADA134419

Title :   Silicon Millimeter Wave Devices by MBE (Molecular Beam Epitaxy).

Descriptive Note : Final rept. Sep 81-Dec 82,

Corporate Author : CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE

Personal Author(s) : Allen,Frederick G

PDF Url : ADA134419

Report Date : May 1983

Pagination or Media Count : 48

Abstract : This 15-month program investigated the fabrication of millimeter wave silicon avalanche diode wafers using the growth process of molecular beam epitaxy (MBE). It was the objective of this effort to apply MBE's exacting depth control and arbitrary dopant deposition capabilities to achieve near-ideal IMPATT profiles. As such, the goal of this effort was directed at achieving good doping level control with sharp, well-defined layer transitions and very thin layer thicknesses for the 100 GHz frequency region. A number of silicon wafers grown during the course of this effort with diode fabrication and electrical testing being accomplished at two industrial laboratories who have extensive millimeter wave IMPATT experience. Early wafer growths and subsequent diode fabrication/testing indicated that although the thickness and doping levels achieved were about right, all of the p-n junctions were far too leaky in reverse bias, and they exhibited soft and often too low of breakdown voltages. In addition, it was found that silicon MBE often etched much more rapidly than bulk silicon and sometimes revealed a milky film. These properties have been previously experienced in non-MBE materials and were attributed to possible high dislocation densities or polycrystalline films.

Descriptors :   *IMPATT diodes, *Epitaxial growth, *Silicon, Molecular beams, Fabrication, Millimeter waves, Doping, Depth control, Semiconductor junctions

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE