Accession Number : ADA135007
Title : GaAs FET Logic at Low Temperatures.
Descriptive Note : Final technical rept. 1 Sep 79-31 Aug 82,
Corporate Author : TEXAS INSTRUMENTS INC DALLAS CENTRAL RESEARCH LABS
Personal Author(s) : Namordi,M R ; White,W A ; Doerbeck,F H
PDF Url : ADA135007
Report Date : Aug 1983
Pagination or Media Count : 76
Abstract : This report covers progress made to investigate thee speed advantage associated with the operation of GaAs integrated circuits at low temperatures (77 K). The work was carried out in conjunction with a TI internally-funded program to develop a viable, room-temperature, high-speed GaAs logic technology. In Section II, material development is discussed. Process development and circuit development are discussed in Sections III and IV, respectively. The principal results of this investigation, the temperature characteristics of GaAs MESFET devices and circuits, are described in Section V.
Descriptors : *Logic circuits, *Field effect transistors, *Gallium arsenides, *Integrated circuits, *Cryogenics, Low temperature, Doping, Fabrication, Room temperature
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE