Accession Number : ADA135281

Title :   InGaPAs by Metalorganic Chemical Vapor Deposition.

Descriptive Note : Final rept. 12 May 80-11 May 83,

Corporate Author : ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER

Personal Author(s) : Hess,K. ; Kasemset,D.

Report Date : OCT 1983

Pagination or Media Count : 151

Abstract : The reaction chemistry involved in the material synthesis of the quaternary compound Gal-xInxAsyPl-y by LPMOCVD has been studied with particular emphasis being devoted to understanding the stoichiometry required to grow these materials lattice matched to InP substrates. A complete characterization of the growth conditions to achieve lattice matched GaInAsP/InP heterostructures was completed during this program. The epitaxial layers were studied by X-ray diffraction and photoluminescence characterization techniques to determine the composition for exact lattice match and the conditions for the appropriate bandgap energy. Optimization of the growth conditions for a particular composition was being performed at the end of the program by monitoring the surface morphology and photoluminescence intensity at various compositions. Electrical transport measurements of mobility and carrier concentration helped to determine the background impurity levels and their dependence on growth conditions.

Descriptors :   *Gallium phosphides, *Indium phosphides, *Synthesis(Chemistry), Chemical reactions, Organometallic compounds, Vapor deposition, Substrates, Stoichiometry, Epitaxial growth, X ray diffraction, Mass spectroscopy

Subject Categories : Atomic and Molecular Physics and Spectroscopy
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE