Accession Number : ADA135340
Title : Studies of Silicon Refractory Metal Interfaces: Photoemission Study of Interface Formation and Compound Nucleation.
Descriptive Note : Final rept. 15 Jul 81-14 Apr 83,
Corporate Author : WISCONSIN UNIV-MADISON
Personal Author(s) : Weaver,J H
PDF Url : ADA135340
Report Date : 08 Sep 1983
Pagination or Media Count : 44
Abstract : Examined are the electronic and morphological interactions which occur at the interface between silicon and a variety of metals, including Cr, Ti, Sm, Au, and Ca. These interface studies were supported by extensive synchrotron radiation photoemission studies of bulk silicides, including Ti2Si5, TiSi2, VSi2, NbSi2, CrSi2, MoSi2, TaSi2, FeSi2, CoSi2, Ni2Si, NiSi, NiSi2, and Pd2Si and by calculations of the density of states of silicides. Identified are the important parameters in the formation of the metal-silicon bond. Demonstrated is the systematic development of the Si-metal p-d hybridization and the reduction of the Si sp3 bond.
Descriptors : *Silicides, *Interfaces, *Photoelectric emission, Refractory metals, Silicon, Chemical bonds, Photochemical reactions, Nucleation, Electrical properties
Subject Categories : Physical Chemistry
Metallurgy and Metallography
Distribution Statement : APPROVED FOR PUBLIC RELEASE