Accession Number : ADA135353

Title :   Electron Ballistic Effects in III-V Semiconductors.

Descriptive Note : Final rept. 25 Sep 80-24 Sep 83,

Corporate Author : MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Robinson,G Y ; Shur,M

PDF Url : ADA135353

Report Date : Nov 1983

Pagination or Media Count : 9

Abstract : The purpose of this three-year research program was to study electron transport in III-V semiconductors, starting with an investigation of ballistic transport in GaAs. Also for experimental studies of electron transport in the III-V semiconductors, test devices were to be constructed from submicron layers grown by molecular beam epitaxy. For ballistic electron transport in submicron GaAs devices, the influence of the boundary conditions were explained, a theory for low-field diode conductance was developed, the high-field diode impedance was calculated, and experimental data was compared to theoretical predictions. This work led to an investigation, both experimental and theoretical, of electron transport in the two-dimensional electron gas (TEG) of a modulation-doped heterostructure. The theoretical studies produced a model of electron transport in GaAs/AlGaAs modulation-doped structures and prediction of the electron mobility in TEG layers. The experimental work led to a new method of III-V heterojunction characterization and to an explanation of the temperature dependent behavior of a modulation-doped transistor.

Descriptors :   *Semiconductors, *Gallium arsenides, *Electron transport, Group III compounds, Group V compounds, Electron gas, Ballistics, Heterojunctions, Layers, Electron mobility, Literature surveys

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE