Accession Number : ADA135389

Title :   Heterojunction Solid-State Devices for Millimeter-Wave Sources.

Descriptive Note : Final rept. 1 Sep 80-31 Aug 83,

Corporate Author : NORTH CAROLINA STATE UNIV RALEIGH DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Trew,R J

PDF Url : ADA135389

Report Date : Oct 1983

Pagination or Media Count : 167

Abstract : The use of compound semiconductor and heterojunction devices as millimeter-wave sources through 100 GHz has been investigated. Both IMPATT and MESFET type devices have been considered. A series of comprehensive and accurate theoretical device models have been developed and utilized in this investigation. Both equilibrium and nonequilibrium transport effects have been investigated. Prototype IMPATT device structures have been fabricated in GaAs and GaInAs/InP. (Author)

Descriptors :   *Heterojunctions, *Millimeter waves, *Field effect transistors, *Impatt diodes, Solid state electronics, Semiconductors, Microwave equipment, Gallium arsenides, Indium phosphides, Transport properties, Sources, Prototypes, Models, Transport, Theory, Structures

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE