Accession Number : ADA135866

Title :   Tunneling through Amorphous Silicon Barriers.

Descriptive Note : Final rept. Jul 82-Aug 83,


Personal Author(s) : Kroger,H ; Smith,L N ; Jillie,D W ; Thaxter,J B

PDF Url : ADA135866

Report Date : Oct 1983

Pagination or Media Count : 31

Abstract : Substantial evidence has been accumulated during the course of this program which indicates that the localized states which are present in nonhydrogenated sputtered amorphous silicon barriers contribute to the larger current density observed at biases below the superconducting energy gap of the electrodes. The basic observations and the method of measuring the density of localized states at the Fermi level of the barrier materials are presented in the Appendix which is a reprint of a paper presented at the 1982 Superconductivity Conference (1). More recent observations and theoretical speculations are included in this report.

Descriptors :   *Silicon compounds, *Tunneling(Electronics), *Superconductivity, Amorphous materials, Barriers, Energy gaps, Fermi surfaces, Electrodes, Current density, Semiconductor junctions, Niobium compounds

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE