Accession Number : ADA135937
Title : Development of High Purity InP Crystals.
Descriptive Note : Final rept. Sep 82-Sep 83,
Corporate Author : CRYSTACOMM INC MOUNTAIN VIEW CA
Personal Author(s) : Antypas,G A
PDF Url : ADA135937
Report Date : Sep 1983
Pagination or Media Count : 14
Abstract : Large diameter, 1 kg in weight, high purity polycrystalline and (100) oriented InP single crystals can be routinely prepared, with background carrier concentrations of 2-4x10 to the 15th power/cc and room temperature mobilities in excess of 4000 sq cm/v-sec. The large diameter (Approx. 3 in.), (100) oriented undoped single crystals have unusually low dislocation densities. Sulfur doped crystals are practically dislocation free.
Descriptors : *Indium phosphides, *Semiconductors, *Purity, Single crystals, Polycrystalline, Crystal growth, Crystal defects, Doping, Current density, Temperature, Diameters
Subject Categories : Crystallography
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE