Accession Number : ADA136033

Title :   Fundamental Radiation Damage Processes in Silicon.

Descriptive Note : Final rept.

Corporate Author : LEHIGH UNIV BETHLEHEM PA

PDF Url : ADA136033

Report Date : 25 Oct 1983

Pagination or Media Count : 15

Abstract : This program has been aimed at detemining and understanding the fundamental properties of simple lattice point defects in semiconductors. The specific purpose has been to determine the electronic properties of the defects, to understand the mechanisms by which they are formed or incorporated into the lattice, and to probe the processes by which they can migrate through the lattice and react with other defects to form complexes. The major emphasis has centered on silicon. As the simplest and best understood semiconductor, silicon provides the best hope of clean, unambiguous and generally applicable answers to these questions.

Descriptors :   *Semiconductors, *Silicon, *Crystal defects, Defect analysis, Point defects, Crystal lattices, Electron irradiation, Vacancies(Crystal defects), Interstitial

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE