Accession Number : ADA136095

Title :   Impurity and Defect Characterization in Epitaxial GaAs, InP and the Ternary and Quaternary Compound Semiconductors.

Descriptive Note : Interim technical rept. 1 Sep 81-31 Aug 82,

Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE FRANCIS BITTER NATIONAL MAGNET LAB

Personal Author(s) : Button,K J ; Afsar,M N

PDF Url : ADA136095

Report Date : 02 Nov 1982

Pagination or Media Count : 9

Abstract : The splitting of the spin doublet of the 1s 2p (m=+1) transition of the hydrogen-like silicon donor in n-GaAs has been observed as a function of applied magnetic field at low temperature. The splitting of the spin doublet increased with increasing magnetic field intensity. The dependence of the splitting on magnetic field intensity was not only larger than linear but was also larger than quadratic dependence in agreement with theory.

Descriptors :   *Semiconductors, *Epitaxial growth, *Defects(Materials), Gallium arsenides, Indium phosphides, Ternary compounds, Quaternary compounds, Impurities, Magnetic fields

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE