Accession Number : ADA136247

Title :   Ion Beam Assisted Deposition of SiO2.

Descriptive Note : Final rept. 1 Apr-31 Dec 82,

Corporate Author : NEW MEXICO UNIV ALBUQUERQUE INST FOR MODERN OPTICS

Personal Author(s) : McNeil,J R

PDF Url : ADA136247

Report Date : Jan 1983

Pagination or Media Count : 33

Abstract : A Kaufman ion source was modified to produce a low energy (30 eV) high current density (3 mA/sq cm) 0(+) and 02(+) (0(+)/2(+)) ion beam at an optical surface being coated with Si02. Films of Si02 were deposited with 0(+)/02(+) ion bombardment at low energy (30 eV) and at high energy (500 eV). Application of the ion-assist technique has the following features: (1) Durable coatings can be produced at low substrate temperature; (2) Film stoichiometry is improved, particularly for low energy bombardment; (3) Hydrogen content of the film is reduced under certain conditions of bombardment; and (4) Stress and structure of Si02 films are not greatly affected by ion bombardment. (Author)

Descriptors :   *Ion bombardment, *Deposition, *Silicon coatings, *Thin films, Silicon dioxide, Ion sources, Ion beams, Low energy, High energy, Experimental data, Low temperature, Substrates, Stoichiometry, Hydrogen, Charts, Graphs, Light transmission, Optical properties

Subject Categories : Coatings, Colorants and Finishes
      Particle Accelerators

Distribution Statement : APPROVED FOR PUBLIC RELEASE