Accession Number : ADA136424

Title :   Wideband Monolithic Microwave Amplifier Study.

Descriptive Note : Final technical rept. 1 Jul 80-30 Sep 83,

Corporate Author : WISCONSIN UNIV-MADISON DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Beyer,J B ; Prasad,S N ; Nordman,J E ; Becker,R C ; Hohenwarter,G K

PDF Url : ADA136424

Report Date : Sep 1983

Pagination or Media Count : 96

Abstract : Work is continued on the analysis and design of GaAs FET distributed amplifiers. Design tradeoffs are established for type of device, number of devices, gain, impedance level and line cutoff frequency. The procedure for achieving the maximum gain-bandwidth product is detailed. Preliminary work on a broadband 0-360 degrees phase shifter is reported. The design of an integral part of the phase shifter, a distributed paraphase amplifier from 2 - 20 GHz, is presented. (Author)

Descriptors :   *Microwave amplifiers, *Distributed amplifiers, *Field effect transistors, *Gallium arsenides, *Monolithic structures(Electronics), S band, Phase shift circuits, Input Output devices, Transmission lines, Computer programs, X band, K band, Impedance, Performance(Engineering), Optimization, Sensitivity, Theory, Amplifiers, Broadband, Gain, Numbers, Losses

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE