Accession Number : ADA136894
Title : GaAs Gigabit Monolithic Optoelectronic Transmitter.
Descriptive Note : Final rept. Jul 81-Aug 83,
Corporate Author : HONEYWELL CORPORATE TECHNOLOGY CENTER BLOOMINGTON MN
Personal Author(s) : Carney,J K
PDF Url : ADA136894
Report Date : Oct 1983
Pagination or Media Count : 79
Abstract : The objective of this program was to develop the Technologies required to monolithically integrate a high performance AlGaAs laser diode with high speed digital GaAs circuitry. This objective was met with the demonstration of a fully integrated optoelectronic transmitter consisting of a Transverse junction stripe (TJS) laser diode, a power driver transistor, and a 4:1 multiplexer. This demonstration is the first major step in the development of high speed optical interconnects for future digital systems operating a gigabit second data rates.
Descriptors : *GALLIUM ARSENIDES, *GALLIUM ARSENIDE LASERS, *INTEGRATED CIRCUITS, ELECTROOPTICS
Subject Categories : Electrooptical and Optoelectronic Devices
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE