Accession Number : ADA136894

Title :   GaAs Gigabit Monolithic Optoelectronic Transmitter.

Descriptive Note : Final rept. Jul 81-Aug 83,

Corporate Author : HONEYWELL CORPORATE TECHNOLOGY CENTER BLOOMINGTON MN

Personal Author(s) : Carney,J K

PDF Url : ADA136894

Report Date : Oct 1983

Pagination or Media Count : 79

Abstract : The objective of this program was to develop the Technologies required to monolithically integrate a high performance AlGaAs laser diode with high speed digital GaAs circuitry. This objective was met with the demonstration of a fully integrated optoelectronic transmitter consisting of a Transverse junction stripe (TJS) laser diode, a power driver transistor, and a 4:1 multiplexer. This demonstration is the first major step in the development of high speed optical interconnects for future digital systems operating a gigabit second data rates.

Descriptors :   *GALLIUM ARSENIDES, *GALLIUM ARSENIDE LASERS, *INTEGRATED CIRCUITS, ELECTROOPTICS

Subject Categories : Electrooptical and Optoelectronic Devices
      Optics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE