Accession Number : ADA137777
Title : Tunable Far Infrared Semiconductor Sources.
Descriptive Note : Final technical rept. 22 Oct 80-31 Dec 83,
Corporate Author : INNSBRUCK UNIV (AUSTRIA) INST OF EXPERIMENTAL PHYSICS
Personal Author(s) : Gornik,E
PDF Url : ADA137777
Report Date : Jan 1984
Pagination or Media Count : 42
Abstract : The concept of continuously tunable far infrared sources was investigated in magnetically and electrically tunable level systems. Landau emission has been investigated in several semiconductors. A useful source for spectroscopic investigations based on bulk GaAs with a resolution below 1 per cm has been developed in the spectral range from 20 to 120 per cm. New promising concepts for tunable sources have been demonstrated recently: A significant line narrowing of the Landau emission was observed from InSb under the presence of hydrostatic pressure above 8 kbar. For the first time tunable emission from spin-flip transitions in uniaxially stressed InSb was observed. Linewidths in the order of 0.2 per cm are found which opens the potential for high resolution spectroscopy with magnetically tunable sources. For the realization of voltage tunable sources based on the voltage tunable electron density in MOS-devices, three possible mechanisms were investigated: The radiative recombination between electric subbands, between minigaps induced by tilted interfaces in respect to the main cristallographic directions and the radiative decay of two-dimensional plasma-oscillations via periodic grating structures.
Descriptors : *Semiconductor diodes, *Tuning devices, *Silicon, *Metal oxide semiconductors, *Gallium arsenides, *Indium antimonides, Far infrared radiation, Transport properties, Hydrostatic pressure, High resolution
Subject Categories : Crystallography
Distribution Statement : APPROVED FOR PUBLIC RELEASE