Accession Number : ADA137798

Title :   Microwave Semiconductor Research - Materials, Devices, Circuits.

Descriptive Note : Annual technical rept. 1 May 81-30 Apr 82,


Personal Author(s) : Eastman,L F ; Woodard,D W ; Wood,C E C ; Wicks,G ; Ballantyne,J

PDF Url : ADA137798

Report Date : 30 Apr 1982

Pagination or Media Count : 62

Abstract : This program covers the growth and assessment of Gallium Arsenide, and related compounds and alloys, for use in microwave, millimeter, and optical devices. It also covers the processing of the material into devices, and the testing of the devices. Both molecular beam epitaxy (MBE) and organo-metallic vapor phase epitaxy (OMVPE) are used for growth. Modulation doped heterostructures and very short gate field effect transistors are two areas covered.

Descriptors :   *Schottky barrier devices, *Microwave equipment, *Semiconductors, *Gates(Circuits), *Field effect transistors, *Gallium arsenides, Electric fields, Epitaxial growth, Composition(Property), Liquid phases, High rate, Silicon nitrides, N type semiconductors, Doping, Silicon, Processing, Chromium, Physical properties, Test and evaluation, Optical equipment, Molecular beams, Low noise amplifiers, Organometallic compounds, Gunn effect, Power equipment, Indium phosphides, Growth(General), Materials

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE