Accession Number : ADA137849

Title :   Studies of III-V Compound Semiconductors for Optical and Microwave Applications.

Descriptive Note : Final rept. 15 Jun 80-31 Aug 83,


Personal Author(s) : Wang,S

PDF Url : ADA137849

Report Date : 02 Jan 1984

Pagination or Media Count : 12

Abstract : Compound semiconductors of GaAs and (GaAl) As were studies for optical and microwave applications. Two growth processes were employed for device fabrication: (1) the liquid-phase epitaxy (LPE) and (2) the molecular beam epitaxy (MBE). The procedure for LPE growth was well established in the laboratory. On the other hand, the MBE growth process required a considerable amount of effort to establish the growth procedure and optimize the growth conditions. (Author)

Descriptors :   *Semiconductors, Optical equipment, Microwave equipment, Gallium arsenides, Aluminum, Epitaxial growth, Liquid phases, Molecular beams, Semiconductor devices, Fabrication, Stabilization, Semiconductor lasers, Tunable lasers, Frequency, Switching, Control, Optical waveguides, Pulse compression, Semiconducting films, Field effect transistors, Optical communications

Subject Categories : Electrical and Electronic Equipment
      Lasers and Masers
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE