Accession Number : ADA138041
Title : Dislocations in Syton Polished InP.
Descriptive Note : Rept. for Aug 81-Aug 82,
Corporate Author : ROME AIR DEVELOPMENT CENTER GRIFFISS AFB NY
Personal Author(s) : Comer,J. J.
Report Date : AUG 1983
Pagination or Media Count : 16
Abstract : This report is about the effect of Syton polishing on single crystal wafers of InP. Whether the material is intended for device fabrication by ion implantation methods or as a substrate for epitaxial growth, it is important that the surface be smooth and clean, and that the region of the material near the surface be free of dislocations. In this case, the orientation of interest was the (111). Since InP has the sphalerite structure, one of its (111) faces will be terminated by In atoms, and the opposite by P atoms. Although chemical polishing with bromine/methanol solutions can be done on the (111)P surface, the method will not give good results on the (111) In surface. To overcome this problem, Syton polishing was attempted an opposite (111) surfaces. Using a bromine/methanol solution, it was relatively easy to thin samples by jet etching (111)P surface so that the (111) in surface could be examined. But it was difficult to etch the (111) In surface to obtain specimens for examination of the (111)P region. Nevertheless, satisfactory specimens were obtained and the results show interesting differences in dislocations at opposite (111) faces. The nature of these dislocations is described in this report.
Descriptors : *Single crystals, *Wafers, *Indium phosphides, *Polishing, *Dislocations, Surface finishing, Silicon dioxide, Colloids, Crystal structure, Orientation(Direction), Etching, Dipoles, Electron beams, Annealing, Electron microscopy
Subject Categories : Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE