Accession Number : ADA138094

Title :   Electrical, Luminescence and SIMS (Secondary Ion Mass Spectroscopy) Characterization of Carbon Implanted Vapor Phase Epitaxial Gallium Arsenide.

Descriptive Note : Doctoral thesis,


Personal Author(s) : Sydenstricker,R M

PDF Url : ADA138094

Report Date : Dec 1983

Pagination or Media Count : 273

Abstract : The electrical, luminescence and mass distribution properties of carbon implanted VPE GaAs have been analyzed. Room temperature Hall measurements and low temperature photoluminescence, each combined with chemical etching, and SIMS experiments were performed on VPE GaAs which had been implanted with 120 keV carbon atoms in doses ranging from 1 x 10 to the 13th power/sq. cm. to 1 x 10 to the 15th power/sq. cm. These samples were subsequently encapsulated with chemical vapor deposition Si3N4 and annealed at 850 C to 950 C for 15 minutes in flowing H2. Unimplanted and neon implanted control samples were also analyzed. The electrical and photoluminescence etch data independently identify a saturation effect for substitutional carbon acceptors at a concentration of approximately 3 x 10 to the 17th power/cc. The overall conclusion is that for carbon concentrations above approximately 3 x 10 to the 17th power/cc the excess carbon will not go substitutional and that for carbon concentrations less than 3 x 10 to the 17th power/cc, the carbon will reside predominately on As sites as an acceptor. Thus, despite the fact that carbon is a Group IVA impurity in GaAs, it is not likely to demonstrate amphoteric behavior as have other Group IVA dopants.

Descriptors :   *Gallium arsenides, *Semiconductors, *Electrical properties, *Luminescence, *Mass spectroscopy, Vapor phases, Epitaxial growth, Carbon, Implantation, Distribution, Hall effect, Photoluminescence, Etching, Vapor deposition, Annealing, P type semiconductors, Layers, Concentration(Chemistry), Thermal diffusion, Transport properties, Measurement, Theses

Subject Categories : Electricity and Magnetism
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE