Accession Number : ADA138241

Title :   Calculations of Misfit Dislocation and Dangling Bond Densities in Abrupt Hg sub (1-x) Cd sub x Te Heterojunctions.

Descriptive Note : Technical rept.,

Corporate Author : AEROSPACE CORP EL SEGUNDO CA CHEMISTRY AND PHYSICS LAB

Personal Author(s) : Schoolar,R B

PDF Url : ADA138241

Report Date : 15 Dec 1983

Pagination or Media Count : 10

Abstract : Based on the classical theory of epitaxial crystal growth, the misfit dislocations and dangling bond densities of abrupt (111) Hg sub (1-x) Cd sub x Te heterojunctions have been calculated. For the case where (x sub 1-x sub 2) greater than 0.1 the dangling bond density is on the order of 10 to the 11th power/sq. cm. Such large dangling bond densities may produce high interface recombination velocities or band-bending at the interface. (Author)

Descriptors :   *Heterojunctions, *Mercury, *Cadmium, *Tellurides, *Epitaxial growth, Dislocations, Chemical bonds, Density, Interfaces, Recombination reactions, Velocity, Bending, Infrared detectors, Substrates, Crystal lattices, Defects(Materials), Layers, N type semiconductors, P type semiconductors

Subject Categories : Electrical and Electronic Equipment
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE