Accession Number : ADA138355

Title :   Chemical Deposition of SiO2 on InP.

Descriptive Note : Technical rept.,

Corporate Author : AEROSPACE CORP EL SEGUNDO CA CHEMISTRY AND PHYSICS LAB

Personal Author(s) : Bertrand,P A ; Fleischauer,P D

PDF Url : ADA138355

Report Date : 12 Dec 1983

Pagination or Media Count : 21

Abstract : Chemical deposition experiments were performed to determine how surface preparation and film deposition conditions influence insulator-semiconductor interface composition and chemical structure. Silicon dioxide layers were chemically deposited on indium phosphide by hydrolyzing silicon orthopropoxide. On unoxidized, etched surfaces, coverage was always patchy. On InP with approximately one monolayer of chemisorbed oxygen in a hydrated-phosphate-like environment, a continuous, approx. 60-A-thick SiO2 film was formed at room temperature. Sio2 attached to the substrate through about one monolayer of Si-O-P bonds. Heating to 50 C during hydrolysis resulted in a mixed Si-In-P oxide, owing to simultaneous hydrolysis and oxidation processes. (Author)

Descriptors :   *Semiconductors, *Insulation, *Hydrolysis, Chemical reactions, Deposition, Surfaces, Layers, Interfaces, Chemical composition, Atomic structure, Silicon dioxide, Indium phosphides, Oxygen, Chemisorption, Films, Chemical bonds, Heating, Oxidation, Bridges, X ray photoelectron spectroscopy

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE