Accession Number : ADA138662
Title : Electrical, Chemical, and Microstructural Characterization of Gettering Mechanisms for VLSI (Very Large Scale Integrated Circuits).
Descriptive Note : Final rept. 30 Sep 80-29 Sep 83,
Corporate Author : PENNSYLVANIA STATE UNIV UNIVERSITY PARK DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Stach,J R
PDF Url : ADA138662
Report Date : 31 Jan 1984
Pagination or Media Count : 9
Abstract : An investigation was made of a number of tettering techniques particularly important for VLSI processing. These techniques have included back surface gettering, intrinsic gettering, and HCl oxidation. The general approach of the investigation was to concentrate on the fundamental mechanisms involved with each of the gettering techniques, looking not only at the electrical implications of the technique, but also be the chemical and microstructural properties.
Descriptors : *Integrated circuits, *Gettering, Processing, Methodology, Hydrogen chloride, Oxidation, Surfaces, Electrical properties, Chemical properties, Microstructure, Point defects, Silicon, Oxygen, Stresses, Metals, Impurities, Interfaces, Diffusion, Mass spectroscopy, Electron microscopy, Atomic spectroscopy
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE