Accession Number : ADA138662

Title :   Electrical, Chemical, and Microstructural Characterization of Gettering Mechanisms for VLSI (Very Large Scale Integrated Circuits).

Descriptive Note : Final rept. 30 Sep 80-29 Sep 83,

Corporate Author : PENNSYLVANIA STATE UNIV UNIVERSITY PARK DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Stach,J R

PDF Url : ADA138662

Report Date : 31 Jan 1984

Pagination or Media Count : 9

Abstract : An investigation was made of a number of tettering techniques particularly important for VLSI processing. These techniques have included back surface gettering, intrinsic gettering, and HCl oxidation. The general approach of the investigation was to concentrate on the fundamental mechanisms involved with each of the gettering techniques, looking not only at the electrical implications of the technique, but also be the chemical and microstructural properties.

Descriptors :   *Integrated circuits, *Gettering, Processing, Methodology, Hydrogen chloride, Oxidation, Surfaces, Electrical properties, Chemical properties, Microstructure, Point defects, Silicon, Oxygen, Stresses, Metals, Impurities, Interfaces, Diffusion, Mass spectroscopy, Electron microscopy, Atomic spectroscopy

Subject Categories : Electrical and Electronic Equipment
      Fabrication Metallurgy

Distribution Statement : APPROVED FOR PUBLIC RELEASE