Accession Number : ADA138916

Title :   Studies of Surfaces and Interfaces on III-V Compounds Using UV (Ultraviolet) and Soft X-Ray Excitation.

Descriptive Note : Final technical progress rept. 1 Dec 74-30 Sep 82,


Personal Author(s) : Spicer,W E ; Lindau,I

PDF Url : ADA138916

Report Date : 30 Sep 1982

Pagination or Media Count : 22

Abstract : The work performed over the four year span of this contract comprises a large body of research. Its results are summarized in this document. The technical problem was to study the surfaces and interfaces of the III-V compound semiconductors. The III-V compound semiconductors GaAS, InP, and GaSb were emphasized. The predominant methodology used was laboratory experimentation: photoemission spectroscopy excited by synchrotron radiation was utilized heavily, along with angle-resolved photoemission, photoemission excited by conventional ultraviolet and x-ray illumination, low energy electron diffraction, Auger electron spectroscopy, contact potential difference (Kelvin probe) measurements, as well as other techniques which are detailed in the publications.

Descriptors :   *Surface chemistry, *Semiconductors, *Emission spectroscopy, *Auger electron spectroscopy, Gallium arsenides, Indium phosphides, Gallium antimonides, Surfaces, Interfaces, Ultraviolet radiation, Soft X rays, Excitation, Group III compounds, Group IV compounds, Group V compounds, Electron diffraction, Schottky barrier devices, Metal oxide semiconductors, Fermi surfaces, Metal metal bonds, Oxygen, Chemisorption, Oxidation

Subject Categories : Atomic and Molecular Physics and Spectroscopy
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE