Accession Number : ADA138938

Title :   Low-Cost GaAs Solar Cell Development.

Descriptive Note : Final rept. Sep 81-Sep 83,

Corporate Author : VARIAN ASSOCIATES INC PALO ALTO CA SOLID STATE LAB

Personal Author(s) : Ludowise,M J

PDF Url : ADA138938

Report Date : Dec 1983

Pagination or Media Count : 71

Abstract : An abbreviated program to design and develop a thin, low-cost GaAs solar cell for space applications is described. Due to funding limitations, the scheduled four-year program was terminated at the two-year point. Several growth runs utilizing the metal organic-chemical vapor phase (MO-CVD) epitaxial process were made in an attempt to optimize the solar cell structure. Both p/n and n/p growths were made with varying emitter thickness and doping levels. Cell thinning for selected cells was successful to less than 10 microns using a special stop-etch technique. These cells were covered prior to thinning to provide strength and reduce the probability of breakage. (Author)

Descriptors :   *Gallium arsenides, *Epitaxial growth, *Solar cells, Vapor deposition, P type semiconductors, N type semiconductors, Thickness, Doping, Thinness, Etching, Optimization, Bonding, Welding, Low costs, Computerized simulation

Subject Categories : Electric Power Production and Distribution
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE