Accession Number : ADA138966

Title :   Interface Properties of Lattice-Matched InGaAsP/InP Heterojunctions.

Descriptive Note : Final rept. 21 Aug 77-22 Aug 80,

Corporate Author : ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Stillman,G E ; Tashima,M M

PDF Url : ADA138966

Report Date : Aug 1981

Pagination or Media Count : 87

Abstract : The growth of InGaAsP and InGaAs by liquid phase epitaxy (LPE) on InP substrates has been investigated to obtain the optimum crystal growth parameters to produce high quality epitaxial layers. The lattice mismatch of these layers with respect to the underlying InP substrate was determined by X-ray diffraction, and the energy gap was obtained by optical spectrophotometer transmission measurements. The distribution coefficients for the growth of lattice matched InGaAsP in the 1.15 to 1.31 micron spectral region were determined. The surface morphology of the epitaxial layers was found. (Author)

Descriptors :   *Epitaxial growth, *Crystal lattices, *Heterojunctions, *Indium phosphides, Interfaces, Spectrophotometers, Energy gaps, Substrates, Liquid phases, X ray diffraction, Layers, Growth(General), Coefficients, Distribution, Optimization, Measurement, Diffusion, Transmittance, Parameters, Morphology, Surfaces, Optics

Subject Categories : Electrical and Electronic Equipment
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE