Accession Number : ADA138992
Title : InP Materials.
Descriptive Note : Annual technical summary rept. 1 Oct 82-30 Sep 83,
Corporate Author : MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
Personal Author(s) : Iseler,G. W.
Report Date : 30 SEP 1983
Pagination or Media Count : 27
Abstract : This report covers the work on InP materials carried out with support of the Department of the Air Force during the period 1 October 1982 through 30 September 1983. A part of this support was provided by the Rome Air Development Center. Residual donors in polycrystalline ingots and nominally undoped LEC boules have been identified by photoluminescence studies. The growth striations in doped LEC boules have been greatly reduced by increasing the seed of crucible rotation rates to promote mixing in the melt. (Author)
Descriptors : *Indium phosphides, *Crystal growth, Synthesis, Purity, Polycrystalline, Czochralski crystals, Optimization, Liquids, Encapsulation, Single crystals, Doping, Mobility, Hall effect, Photoluminescence, Crucibles, Rotation, Rates, Striations, Mixing, Melts, Charge carriers
Subject Categories : Crystallography
Distribution Statement : APPROVED FOR PUBLIC RELEASE