Accession Number : ADA139179

Title :   Fundamental Studies of Growth, Doping and Transformation in Beta Silicon Carbide.

Descriptive Note : Annual technical rept. 1 Sep 82-31 Aug 83,

Corporate Author : NORTH CAROLINA STATE UNIV RALEIGH DEPT OF MATERIALS ENGINEERING

Personal Author(s) : Davis,R F

PDF Url : ADA139179

Report Date : 31 Aug 1983

Pagination or Media Count : 57

Abstract : Semiconductor quality beta-SiC thin films are currently being grown for future microelectric applications using CVD techniques. Research in this period has included initial ion implantation studies coupled with annealing and ion microprobe analyses of the resulting implant profiles. An indepth study of the converted layer formed by the reaction of C2H4 with the Si substrate is also included in this report. (Author)

Descriptors :   *Epitaxial growth, *Vapor deposition, *Silicon carbides, *Doping, Thin films, Semiconducting films, Ion implantation, Annealing, N type semiconductors, P type semiconductors, Microprobes, Layers, Substrates, X ray photoelectron spectroscopy, Plasmons

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE