Accession Number : ADA139592

Title :   Impurity and Defect Interactions in GaAs.

Descriptive Note : Final technical rept. 1 Aug 80-31 Dec 83,

Corporate Author : WASHINGTON UNIV ST LOUIS MO SEMICONDUCTOR RESEARCH LAB

Personal Author(s) : Wolfe,C M ; Fedders,P A ; Burgess,J H ; Stillman,G E ; Yee,C M L

PDF Url : ADA139592

Report Date : 29 Feb 1984

Pagination or Media Count : 178

Abstract : This work was initiated to examine interactions among impurities and defects in GaAs which produce problems in the fabrication of high-speed integrated circuits. For this purpose various aspects of impurity and defect identification, interaction, redistribution, incorporation, and carrier scattering were investigated. (Author)

Descriptors :   *Semiconductors, *Gallium arsenides, *Epitaxial growth, *Doping, *Impurities, *Crystal growth, *Ion implantation, Sampling, Bulk materials, Annealing, Thermal resistance, Hall effect, Defects(Materials), Integrated circuits

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE