Accession Number : ADA139758

Title :   Undoped Buffer Layer Development.

Descriptive Note : Final technical rept. 1 Mar 81-31 Mar 83,

Corporate Author : ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER

Personal Author(s) : Miller,D

PDF Url : ADA139758

Report Date : Jan 1984

Pagination or Media Count : 59

Abstract : This program focused on the growth and analysis of epitaxial layers using three different techniques which have been successful in producing high purity, high mobility, epilayer material for device applications. These included molecular beam epitaxy (MBE), metalorganic chemical vapor deposition (MOCVD), and vapor phase epitaxy. Application of characterization techniques such as SIMS(Secondary Ion Mas Spectrometry), infrared absorption, photoluminescence, deep level transient spectroscopy, and photoconductivity has allowed progress to be made in understanding the major deep impurity centers in semi-insulating epitaxial GaAs. (Author)

Descriptors :   *Epitaxial growth, *Buffers, *Layers, *Semiconductors, Crystals, Molecular beams, Vapor deposition, Vapor phases, Purity, Mobility, Mass spectroscopy, Infrared spectroscopy, Photoluminescence, Photoconductivity, Impurities, Insulation, Gallium arsenides, Hall effect, Traps, Measurement

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE