Accession Number : ADA139820

Title :   Investigation of Charge Coupled Devices for Signal Processing.

Descriptive Note : Final technical rept. 1 Jan 81-30 Sep 83,

Corporate Author : ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Sah,C T

PDF Url : ADA139820

Report Date : Feb 1984

Pagination or Media Count : 18

Abstract : New constant capacitance voltage transient methods are developed. Traps from ion implantation damage are profiled and characterized. New methods of determination of both majority and minority carrier capture rates at traps in one diode is developed. Two-dimensional numerical analyses with new boundary equations are demonstrated for micron and submicron silicon MOS devices. Dangling bound and hydrogen bonding of interface states and bulk dopant acceptor (boron) traps are experimentally demonstrated. (Author)

Descriptors :   *Charge coupled devices, *Signal processing, *Ion implantation, *Metal oxide semiconductors, Equivalent circuits, Trapping(Charged particles), Charge carriers, Performance(Engineering), Numerical analysis, Limitations, Semiconductor diodes, Impurities, Determination, Correlators, Measurement, Damage, Hydrogen, Surfaces, Two dimensional, Rates, Silicon, Equations, Bonding, Signals, Noise, Boron, Theory

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE