Accession Number : ADA140052

Title :   Microwave, Semiconductor Research - Materials, Devices and Circuits.

Descriptive Note : Annual technical rept. 1 May 82-30 Apr 83,

Corporate Author : CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s) : Eastman,L F ; Woodard,D W ; Wicks,G W ; Ballantyne,J ; Tang,C L

PDF Url : ADA140052

Report Date : Mar 1984

Pagination or Media Count : 59

Abstract : This program covers the growth and assessment of Gallium Arsenide, and related compounds and alloys, for use in microwave, millimeter, and optical devices. It also covers the processing of the material into devices, and the testing of the devices. Both molecular beam epitaxy (MBE) and organo-metallic vapor phase epitaxy (OMVPE) are used for growth. Materials assessment is included. Short modulation doped heterojunction transistors, as well as ballistic electron vertical FETs and heterojunction bipolar transistors, are covered.

Descriptors :   *SCHOTTKY BARRIER DEVICES, *MICROWAVE EQUIPMENT, *SEMICONDUCTORS, *GATES(CIRCUITS), *FIELD EFFECT TRANSISTORS, *GALLIUM ARSENIDES, N TYPE SEMICONDUCTORS, ELECTRIC FIELDS, LOW NOISE AMPLIFIERS, EPITAXIAL GROWTH, ORGANOMETALLIC COMPOUNDS, COMPOSITION(PROPERTY), LIQUID PHASES, HIGH RATE, GUNN EFFECT, SILICON NITRIDES, PHYSICAL PROPERTIES, INDIUM PHOSPHIDES, CHROMIUM, MATERIALS, PROCESSING, OPTICAL EQUIPMENT, SILICON, GROWTH(GENERAL), DOPING

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE