Accession Number : ADA140771

Title :   Studies of Surfaces and Interfaces on III-V Compounds Using UV and Soft X-Ray Excitation.

Descriptive Note : Final technical progress rept. 1 Dec 74-30 Sep 82,

Corporate Author : STANFORD UNIV CA STANFORD ELECTRONICS LABS

Personal Author(s) : Spicer,W E ; Lindau,I

PDF Url : ADA140771

Report Date : 30 Sep 1982

Pagination or Media Count : 22

Abstract : The work performed over the four year span of this contract comprises a large body of research. Its results are summarized in this document. The technical problem was to study the surfaces and interfaces of the III-V compound semiconductors. The semiconductors were selected for their technological as well as fundamental importance. The III-V compound semiconductors, GaAs, InP, and GaSb were emphasized. The predominant methodology used was laboratory experimentation: photoemission spectroscopy excited by synchrotron radiation was utilized heavily, along with angle-resolved photoemission, photoemission excited by conventional ultraviolet and x-ray illumination, low energy electron diffraction, Auger electron spectroscopy, contact potential difference (Kelvin probe) measurements, as well as other techniques which are detailed in the publications.

Descriptors :   *Semiconductors, *Surface analysis, *Group III compounds, *Group V compounds, Interfaces, Gallium arsenides, Indium phosphides, Gallium antimonides, Excitation, Ultraviolet radiation, X rays, Laboratory tests, Photoelectric emission, Spectroscopy, Illumination, Electron diffraction, Auger electron spectroscopy, Schottky barrier devices, Bonding, Oxygen, Chemisorption, Oxidation

Subject Categories : Inorganic Chemistry
      Atomic and Molecular Physics and Spectroscopy
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE