Accession Number : ADA140819

Title :   Development of Short Gate FET's.

Descriptive Note : Annual rept. Jun 82-Jun 83,

Corporate Author : HOWARD UNIV WASHINGTON DC DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Spencer,M G

PDF Url : ADA140819

Report Date : Dec 1983

Pagination or Media Count : 20

Abstract : Annual results on research for development of short gate FET's is reported. High material purity was obtained on in house liquid phase and vapor phase reactors. Quarter micron metal lines have been fabricated using deep uv lithography. (Author)

Descriptors :   *Field effect transistors, *Gates(Circuits), *Lithography, *Gallium arsenides, Schottky barrier devices, Submillimeter waves, Epitaxial growth, Short range(Distance), Molecular beams, Air Force procurement, High rate, Ion implantation, Q band, Ultraviolet radiation, Materials, Space charge, Chromium, Purity, Scalers, Fabrication

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE