Accession Number : ADA140924

Title :   Fundamental Studies of Growth, Doping and Transformation in Beta Silicon Carbide.

Descriptive Note : Annual letter rept.,

Corporate Author : NORTH CAROLINA STATE UNIV RALEIGH SCHOOL OF ENGINEERING

Personal Author(s) : Davis,R F ; Stadelmaier,H H

PDF Url : ADA140924

Report Date : 15 Mar 1984

Pagination or Media Count : 36

Abstract : Electronic quality beta - silicon carbide thin films grown by CVD on Si substrates have been implanted with B(+),AL(+),P(+) and N(+) ions or doped with B(+) and AL(+) during growth. Rapid thermal annealing or resistive heating of the implanted samples up to 1653K for five minutes cause only modest activation of the charge carriers. Oxidation, plasma etching, electrical characterization and preparation for device fabrication have also been conducted. (Author)

Descriptors :   *Silicon carbides, *Thin films, *Epitaxial growth, Vapor phases, Doping, Ion implantation, Annealing, Charge carriers, Substrates, Electrical properties, Crystal growth, Oxidation

Subject Categories : Inorganic Chemistry
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE