Accession Number : ADA141032

Title :   Infrared Nonlinear Processes in Semiconductors.

Descriptive Note : Final technical rept. 1 Oct 79-30 Nov 83,

Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE

Personal Author(s) : Wolff,P A ; Aggarwal,R L ; Jagannath,C ; Yuen,S Y ; Becla,P

PDF Url : ADA141032

Report Date : 15 Feb 1984

Pagination or Media Count : 17

Abstract : The primary purpose of this program was to use nonlinear techniques to study electron dynamics and kinetics in semiconductors. Possible applications of nonlinear interactions were also considered. These investigations have combined theory and experiment. The statement of work for the contract included the following tasks: (A) Study impurity dynamics and electron delocalization in Ge and Si; (B) Generate infrared radiation via coherent excitation of collective modes; (C) Observe and Study magnetoacoustic waves; (D) Stimulate plasmon emission in (Hg, Cd)Te; (E) Study spin dynamics and use spins to generate far infrared radiation in (Hg, Cd)Te; (F) Study valley-transfer processes; (G) Characterize (Hg, Cd)Te with optical techniques; and (H) Study semiconductors with field-tunable gap.

Descriptors :   *Semiconductors, *Nonlinear systems, *Infrared radiation, Electrodynamics, Kinetics, Far infrared radiation, Impurities, Magnetoacoustics, Acoustic waves, Optics, Emission, Plasmons

Subject Categories : Infrared Detection and Detectors
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE