Accession Number : ADA141113

Title :   Superconducting Electronic Film Structures.

Descriptive Note : Annual rept. 1 Jan-31 Dec 83


Personal Author(s) : Braginski,A I ; Gavaler,J R

PDF Url : ADA141113

Report Date : 11 Jan 1984

Pagination or Media Count : 19

Abstract : Single crystal NbN films were prepared on sapphire having a (2,-1,-1,3) surface orientation. Electron diffraction and Laue data show that the NbN and sapphire orientations are related, proving epitaxial growth. A15 structure V-Si and for the first time A15 Nb-Ge films were prepared reproducibly by a reactive sputtering process. These compounds were formed at temperatures as low as 500 C with critical temperatures above 12K. Niobium films were prepared at less than 100 C with critical temperatures greater than 9K. Epitaxial quality A15 Nb-Ir single crystal substrates were prepared. A new magnetron sputtering system was implemented. Progress on the assembly and implementation of a MBE-type deposition and in situ analytical facility is reported. (Author)

Descriptors :   *Superconductors, *Thin films, *Single crystals, *Niobium compounds, *Nitrides, Sapphire, Surfaces, Orientation(Direction), Symmetry(Crystallography), Epitaxial growth, Crystal structure, Germanium, Sputtering, Annealing, Microstructure, Vanadium, Silicon, Josephson junctions

Subject Categories : Crystallography
      Electricity and Magnetism
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE