Accession Number : ADA141381

Title :   Semiconductors Investigated by Time Resolved Raman Absorption and Photoluminescence Spectroscopy Using Femtoseond and Picosecond Laser Techniques.

Descriptive Note : Progress rept. 1 Dec 82-1 Jan 84,

Corporate Author : CITY COLL NEW YORK INST FOR ULTRAFAST SPECTROSCOPY AND LASERS

Personal Author(s) : Alfano,R R ; Doukas,A G

PDF Url : ADA141381

Report Date : Mar 1984

Pagination or Media Count : 10

Abstract : We report on the research performed during the period 1982-1983 under the auspices of AFOSR. The research effort follows two directions: (1) laser development: subpicosecond laser, application of anti-resonant cavity to Nd:glass, study of the emerald laser, and study of a new mode-locking dye for shorter pulses. (2) Time-resolved fluorescence and absorption studies of CdCr2Se4, GaAs and Ga(0,5)In(0.5)P with the goal to understand the interaction and kinetics of photogenerated carriers and basic assignments of the valence-conduction band transitions (CdCr2Se4). We have also investigated the dynamics of semi-insulating CdSe. Finally we have continued the research on radiation damage (neutrons and protons) in CdSe and GaAs. (Author)

Descriptors :   *Raman spectroscopy, *Laser applications, *Semiconductors, Absorption spectra, Photoluminescence, Neodymium lasers, Glass lasers, Laser cavities, Kinetics, Radiation damage, Plasmas(Physics), Holes(Electron deficiencies), Dye lasers, Mode locked lasers, Fluorescence, Absorption, Cadmium, Chromium, Selenium, Gallium arsenides, Gallium, Indium phosphides, Kinetics, Charge carriers, Valence bands

Subject Categories : Lasers and Masers
      Atomic and Molecular Physics and Spectroscopy
      Optics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE