Accession Number : ADA141577
Title : High Resolution Measurements of Impurity-Induced Localized Vibrational Modes in Semiconductors.
Descriptive Note : Final scientific rept. 1 Mar 83-29 Feb 84,
Corporate Author : UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB
Personal Author(s) : Spitzer,W G
PDF Url : ADA141577
Report Date : 26 Mar 1984
Pagination or Media Count : 39
Abstract : The recent measurements and study of the carbon-induced localized vibrational mode (LVM) in GaAs have demonstrated that nearest neighbor isotropic frequency shifts can be observed if one uses the high resolution capability of a Fourier transform infrared (FITR) spectrometer. One major importance of such measurements lies in the use of the shifts to determine the impurity site and the formation of complexes such as dimers. This feature has been used in a detailed study of the LVM infrared absorption of Si-doped GaAs. Samples electrically compensated by electron irradiation and by Li saturation were used in the study. Bands due to SiGa, SiAs, SiGa-SiAs, 7LiGa, and SiAs-AsGa (or VGa) were studied in high resolution. In several cases the structures observed in the high resolution measurements were compared with model calculations with generally satisfactory results.
Descriptors : *Semiconductors, *Vibration, *Impurities, Carbon, Frequency shift, Fourier spectrometers, Dimers, Gallium arsenides, High resolution, Electron irradiation, Lattice dynamics
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE