Accession Number : ADA141809

Title :   Chemical Bonding, Interdiffusion and Electronic Structure at InP, GaAs, and Si-Metal Interfaces.

Descriptive Note : Interim summary rept.,

Corporate Author : XEROX WEBSTER RESEARCH CENTER NY

Personal Author(s) : Brillson,L J

PDF Url : ADA141809

Report Date : 15 Jan 1984

Pagination or Media Count : 200

Abstract : Over the past two years, we have carried out an experimental program to investigate the interface electronic states and its relation to the chemical structure formed at InP. GaAs, and Si-metal interfaces as a result of interfaces chemical reaction and diffusion. We have used soft x-ray photoemission spectroscopy to characterize interfacial bonding and diffusion on an atomic scale. We have used surface photovoltage spectroscopy to identify interface electronic states within the semiconductor band gap. We have also used Auger electron spectroscopy coupled with ion sputtering to profile the interface chemical structure after the Schottky barrier is formed and have identified spatial changes in stoichiometry normal to the interface plane which are dependent on chemical bond strength between metal and semiconductor. These measurements provide new, more detailed relationships between the surface and interface chemical structure on a microscopic scale and the Schottky barrier formation. We have used a number of complementary experimental techniques to probe the electronic structure of semiconductor surfaces and interfaces and its relation to the chemical nature (i.e., new atomic bonding, atomic rearrangement, added chemical species) of these surfaces and interfaces. Our work has concentrated primarily on InP surfaces and interfaces since it exhibits Fermi level movements over a significant part of the band gap and Schottky barriers which are significantly different for junctions with different metals. (Author)

Descriptors :   *Semiconductors, *Interfaces, *Chemical bonds, *Diffusion, *Electronic states, *Structural properties, *Indium phosphides, *Gallium arsenides, *Metals, Auger electron spectroscopy, Electronics, Molecular structure, Schottky barrier devices, Surfaces, Soft x rays, X ray photoelectron spectroscopy, Photovoltaic effect

Subject Categories : Atomic and Molecular Physics and Spectroscopy
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE