Accession Number : ADA141867

Title :   Insulating Films on GaAs.

Descriptive Note : Final rept. 1 Mar 76-30 Sep 79,

Corporate Author : MINNESOTA UNIV MINNEAPOLIS

Personal Author(s) : Robinson,G Y

PDF Url : ADA141867

Report Date : 30 Sep 1979

Pagination or Media Count : 7

Abstract : This project was an experimental investigation of the formation and the electrical characteristics of thin insulating layers on the compound semiconductor gallium arsenide, GaAs. The primary objective of the study was to obtain fundamental knowledge of the insulator-semiconductor interface for thin film structures formed by two different methods: (1) growth of oxide layers by plasma anodization, and (2) chemical vapor deposition of silicon nitride layers by a low temperature plasma-enhanced technique and a high temperature pyrolytic process. A secondary objective was to develop thin insulating films that may be suitable for surface passivation of GaAs devices. (Author)

Descriptors :   *Semiconductors, *Insulation, *Layers, *Gallium arsenides, *Interfaces, Chemical reactions, Vapor deposition, Electrical properties, Thin films, Anodic coatings, Plasmas(Physics), Passivity, Surfaces, Pyrolysis

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE