Accession Number : ADA180114

Title :   Electrical Characterization of VLSI RAMs and PROMs.

Descriptive Note : Final rept. Mar 84-Jun 86,

Corporate Author : GTE COMMUNICATIONS SYSTEMS CORP PHOENIX AZ

Personal Author(s) : Formoso,M ; Giammarrusco,D ; Hornbuckle,G ; Henrikson,R ; Rolley,E

PDF Url : ADA180114

Report Date : Oct 1986

Pagination or Media Count : 397

Abstract : Extensive electrical characterizations were performed on 256K bit and 512K bit ultra violet erasable PROMs (UVEPROMs), 64K bit electrically erasable PROMs (EEPROMs), 64K static RAMs (organized as 8Kx8 bits), 256K dynamic RAMs (CMOS) and 32R16 PAL devices available from the merchant semiconductor industry. Based on the data obtained from the devices, parameter limits were established and proposed for the draft MIL-M-38510/XXX specifications. The data, proposed limits and test methodologies and the related discussions are presented. Keywords: Memory devices; Random access memories; Monolithic structures; Semiconductors; Complementary metal oxide semiconductors.

Descriptors :   *RANDOM ACCESS COMPUTER STORAGE, *READ ONLY MEMORIES, COMPLEMENTARY METAL OXIDE SEMICONDUCTORS, LIMITATIONS, MEMORY DEVICES, SEMICONDUCTORS, TEST METHODS, ULTRAVIOLET RADIATION, MONOLITHIC STRUCTURES(ELECTRONICS)

Subject Categories : Computer Hardware

Distribution Statement : APPROVED FOR PUBLIC RELEASE