Accession Number : ADA180186

Title :   Spatially Selective Photoelectrochemistry.

Descriptive Note : Final rept. 1 Aug 79-31 Oct 86,

Corporate Author : EIC LABS INC NORWOOD MA

Personal Author(s) : Rauh,R D ; Boudreau,Robert A ; Carrabba,Michael M ; Langmuir,Margaret E ; Micheels,Ronald H

PDF Url : ADA180186

Report Date : Mar 1987

Pagination or Media Count : 7

Abstract : This porgram has dealt with applications of photoelectrochemistry to semiconductor technology. Light localized etching and electroplating have been demonstrated for n-GaAs, including imaging with a computer-controlled focused laser light source and crystallographically enhanced photoelectrochemical etching using conventional photoresist masks. These studies have resulted in new processes for high aspect ratio etching in compound semiconductors, and in fabrication of sawtooth Eschelle-type diffraction gratings for spectroscopy and integrated electro-optics.

Descriptors :   *SEMICONDUCTORS, *ELECTROCHEMISTRY, *PHOTOCHEMICAL REACTIONS, *ETCHING, ELECTROPLATING, ELECTROOPTICS, INTEGRATED SYSTEMS, SPECTROSCOPY, MASKS, PHOTORESISTORS, ASPECT RATIO, LIGHT, PHOTOELECTRIC CELLS(SEMICONDUCTOR), GALLIUM ARSENIDES, N TYPE SEMICONDUCTORS, IMAGE PROCESSING, LASERS

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE