Accession Number : ADA181016
Title : Characterization of Infrared Properties of Layered Semiconductors.
Descriptive Note : Final rept. 1 Apr 83-29 Feb 87,
Corporate Author : CALIFORNIA UNIV LOS ANGELES DEPT OF PHYSICS
Personal Author(s) : Braunstein,Rubin
PDF Url : ADA181016
Report Date : 20 Feb 1987
Pagination or Media Count : 160
Abstract : The technique of infrared wavelength modulation absorption, photo-induced transient-spectroscopy, Raman scattering, and photo-mixing were developed for non-destructive characterization of layered semiconductors. Infrared wavelength modulation on semi-insulating GaAs reveals two resonant type peaks with fine structures near 0.37 and 0.40 eV as well as plateaus and thresholds at higher energies. The absorption at 0.37 eV is interpreted as due to the intra-center transition between levels of an accidental iron impurity. The absorption band near 0.40 eV can be annealed out by heat treatment and is characterized as belonging to a structural multi-level defect complex. Photo-induced-transient- spectroscopy technique also reveals an annealable level at 0.42 eV. Crystalline Arsenic was observed to grow on the surface of GaAs during exposure to continuous-wave laser radiation. A study of time development of Arsenic growth as revealed by Raman backscattering indicated that a surface diffusion process was responsible for limiting the growth process. Keywords: Infrared, Wavelengths, Modulation, Photo Induced Transients, Raman Scattering, Photo Mixing, Deep Levels, Lifetime, Drift, Velocity, Oxides, Growth.
Descriptors : *INFRARED RADIATION, *SEMICONDUCTORS, *GALLIUM ARSENIDES, ACCIDENTS, IMPURITIES, IRON, ARSENIC, CRYSTALS, GROWTH(GENERAL), ABSORPTION, FREQUENCY MODULATION, MODULATION, PHOTOGRAPHS, DRIFT, HEAT TREATMENT, FREQUENCY, LAYERS, OXIDES, MIXING, TRANSIENTS, PLATEAUS, LIGHT SCATTERING, RAMAN SPECTRA, SPECTROSCOPY, DIFFUSION, SURFACES, BACKSCATTERING, INSULATION, DEFECTS(MATERIALS), STRUCTURAL PROPERTIES
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE