Accession Number : ADA181167
Title : Strength and Structure of Ga(1-x)In(x)As Alloys.
Descriptive Note : Quarterly rept. 1 Jan-31 Mar 87,
Corporate Author : OHIO STATE UNIV RESEARCH FOUNDATION COLUMBUS
Personal Author(s) : Faber,Katherine T ; Hirth,John P
PDF Url : ADA181167
Report Date : 15 Apr 1987
Pagination or Media Count : 6
Abstract : Substantial solid solution strengthening of Gallium arsenide by In acting as Indium arsenide units has recently been predicted for an intermediate temperature, plateau region. This strengthening could account, in part, for the reduction of dislocation density in GaAs single crystals grown from the melt. High temperature deformation measurements have been carried out on GaAs from 700 to 1100 C in the (123) orientation. In this single slip orientation, the critical resolved shear stress of the Indium-doped material is nearly twice that of the undoped material. Values of the critical resolved shear stress are weakly dependent on temperature, consistent with the solid solution hardening model. The observed increase in resistance to glide is sufficient to eliminate dislocations in large diameter crystals during growth. Electron microscopy is used to relate the mechanical properties of these materials to their dislocated structures.
Descriptors : *GALLIUM ARSENIDES, *ARSENIDES, *INDIUM COMPOUNDS, CRYSTALS, DEFORMATION, DENSITY, DIAMETERS, DISLOCATIONS, DOPING, ELECTRON MICROSCOPY, HARDENING, HIGH TEMPERATURE, INDIUM, MATERIALS, MEASUREMENT, MECHANICAL PROPERTIES, MODELS, REDUCTION, SHEAR STRESSES, SINGLE CRYSTALS, SOLID SOLUTIONS, SOLUTIONS(MIXTURES), STRENGTH(MECHANICS), TEMPERATURE
Subject Categories : Inorganic Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE