Accession Number : ADA181179
Title : III-V Heterojunction Structures and High Speed Devices.
Descriptive Note : Annual rept. 1 Feb 86-31 Jan 87,
Corporate Author : ILLINOIS UNIV AT URBANA COORDINATED SCIENCE LAB
Personal Author(s) : Morkoc,Hadis
Report Date : 24 MAR 1987
Pagination or Media Count : 29
Abstract : Much better p-GaAs/n-Si heterojunction has been obtained. This led to new experimental and theoretical studies of these diodes and progress has been made in the understanding of the electrical properties of the GaAs/Si interface. The study about dislocation reduction by annealing has been continued in connection with N. Otsuka from Purdue University. Interesting features has been revealed by TEM plan view made such as the creation of a clearly observable misfit dislocation network after annealing.
Descriptors : GROUP III COMPOUNDS, GROUP V COMPOUNDS, HETEROJUNCTIONS, ANNEALING, DIODES, DISLOCATIONS, ELECTRICAL PROPERTIES, NETWORKS, REDUCTION, STRUCTURES, THEORY
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE