Accession Number : ADA181182
Title : Numerical Simulation of the Permeable Base Transistor.
Descriptive Note : Final rept. 1 Sep 84-31 Dec 86,
Corporate Author : SCIENTIFIC RESEARCH ASSOCIATES INC GLASTONBURY CT
Personal Author(s) : Meyyanppan,M ; Kreskovsky,J P ; Morrison,B ; Grubin,H L
PDF Url : ADA181182
Report Date : 04 May 1987
Pagination or Media Count : 151
Abstract : This document describes the results of an SBIR Phase II program to investigate, through numerical simulation, the operational physics of the gallium arsenide permeable base transistor. Two distinct algorithms were used in the study: the semiconductor drift and diffusion equation algorithm and the moments of the Boltzmann transport equation algorithm. The results of the study show that one-micron feature size PBTs are capable of: a) cutoff frequencies in excess of 120 GHz, b) fmax values in the vicinity of 200 GHz, and c) breakdown voltages in excess of 17 volts. The study also demonstrates that the design of the PBT is compatible with hydrodynamic flow concepts, which suggest means to significantly reduce the capacitance of the PBT.
Descriptors : *NUMERICAL ANALYSIS, *SEMICONDUCTORS, *TRANSISTORS, *GALLIUM ARSENIDES, ALGORITHMS, BOLTZMANN EQUATION, TRANSPORT PROPERTIES, DIFFUSION, EQUATIONS, FLOW, HYDRODYNAMICS, MATHEMATICAL MODELS, DRIFT, CAPACITANCE, MOMENTS, PHYSICS
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE